Dr. PHẠM HUỲNH TRÂM

• Office: Room 602, School of Industrial engineering and management, International University.
• Quarter 6, Linh Trung Ward, Thu Duc District, HCM City, Vietnam
• Phone: (028) 37244270 Ext: 3327
• Email:phtram@hcmiu.edu.vn

 Education

• Ph.D. in Manufacturing Systems and Technology Nanyang Technological University, Singapore-MIT Alliance

 Experience

• School of Industrial engineering and management, International University – Vietnam National University of HCMC

 Research Interests

• Lean Production
• Quality Management
• Simulation

 Teaching Courses

• Lean production
• Quality management
• Simulation
• Experimental design
• Project management
• Critical thinking
• Leadership

I.Journal Papers:

1. K.P. Lim, H.T. Pham, S.F. Yoon, and K.H. Tan. Effect of N incorporation on the characteristics of InSbN diode. Thin Solid Films 520, 2269 (2012).
2. Lim, K. P., Pham, H. T., Yoon, S. F., Tan, K. H. & Ngo, C. Y. InSb1-xNx/InSb/GaAs alloys by thermal annealing for mid-infrared photodetection. Applied Physics Letters 97, 221112 (2010).
3. Lim, K. P., Pham, H. T., Yoon, S. F., Ngo, C. Y. & Tripathy, S. Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy. Applied Physics Letters 96, 161903 (2010).
4. Lim, K. P., Pham, H. T., Yoon, S. F., Markowitz, A. & Yakovlev, N. Growth temperature and plasma power effects on N incorporation in InSbN grown by molecular beam epitaxy. Physica Status Solidi (RRL) – Rapid Research Letters 3, 263 (2009).
5. Lim, K.P., Yoon, S. F., Pham H. T. Properties of InSbN grown on GaAs by radiofrequency nitrogen plasma-assisted molecular beam epitaxy. Journal of Physics D: Applied Physics 42, 135419 (2009)
6. Pham, H. T., Yoon, S. F., Chen, K. P. & Boning, D. Characterization of carbon-doped InSb diode grown by molecular beam epitaxy. Journal of Physics D: Applied Physics 41, 025304 (2008).
7. Lim, K. P., Yoon, S. F., Pham, H. T. & Tripathy, S. Defect characterization of InSb1-xNx grown using radio frequency nitrogen plasma-assisted molecular beam epitaxy. Journal of Physics D: Applied Physics 41, 165301 (2008).
8. Pham, H. T., Yoon, S. F., Tan, K. H. & Boning, D. Effects of nitrogen incorporation in In Sb1-xNx grown using radio frequency plasma-assisted molecular beam epitaxy. Applied Physics Letters 90, 92115 (2007).
9. Pham, H. T., Yoon, S. F., Boning, D. & Wicaksono, S. Molecular beam epitaxial growth of indium antimonide and its characterization. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, 11 (2007).

 II.Conference Papers:

1. Dang Ngoc Thao Thy, Pham Huynh Tram, Nhieu Nhat Luong: Agent-based simulation for price strategies. Proceedings of International Conference on Logistics and Industrial Engineering (2019)
2. Tran Ha Thanh Vy, Pham Huynh Tram, Nguyen Truong Nguyen: Application of Mix-Integer Programming and Simulation for facility layout planning – A case study of Thu Duc Electro-Mechanical Joint Stock Company. Proceedings of International Conference on Logistics and Industrial Engineering (2019)
3. Duong Viet Thanh Truc, Pham Huynh Tram, Nhieu Nhat Luong: Flexible flow shop manufacturing system improvement by simulation approach: A case study of handbags manufacturer in Ho Chi Minh city. Proceedings of International Conference on Logistics and Industrial Engineering (2019)
4. Tran Thi Yen Nhu, Nhieu Nhat Luong, Pham Huynh Tram: Capacitated vehicle routing problem with time windows and split delivery integrated with an information management system for cargo delivery service in ho chi Minh city: a case study of rong thien logistics company. Proceedings of International Congress on Logistics and SCM Systems 2018. (2018).
5. Cu Hoang Hung, Pham Huynh Tram, Ho Anh Tuan: Improving distributor productivity by one-week lean workshop approach. Proceedings of the 13th International Congress on Logistics and SCM Systems 2018. (2018)