Lecturer
Contact Information
- Office: Room 602, School of Industrial engineering and management, International University.
- Quarter 6, Linh Trung Ward, Thu Duc District, HCM City, Vietnam
- Phone: (028) 37244270 Ext: 3327
- Email:phtram@hcmiu.edu.vn
Education
- Ph.D. in Manufacturing Systems and Technology Nanyang Technological University, Singapore-MIT Alliance
Experience
- School of Industrial engineering and management, International University – Vietnam National University of HCMC
Research Interests
- Lean Production
- Quality Management
- Simulation
Teaching Courses
- Lean production
- Quality management
- Simulation
- Experimental design
- Project management
- Critical thinking
- Leadership
Publications
I.Journal Papers:
I.Journal Papers:
- K.P. Lim, H.T. Pham, S.F. Yoon, and K.H. Tan. Effect of N incorporation on the characteristics of InSbN diode. Thin Solid Films 520, 2269 (2012).
- Lim, K. P., Pham, H. T., Yoon, S. F., Tan, K. H. & Ngo, C. Y. InSb1-xNx/InSb/GaAs alloys by thermal annealing for mid-infrared photodetection. Applied Physics Letters 97, 221112 (2010).
- Lim, K. P., Pham, H. T., Yoon, S. F., Ngo, C. Y. & Tripathy, S. Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy. Applied Physics Letters 96, 161903 (2010).
- Lim, K. P., Pham, H. T., Yoon, S. F., Markowitz, A. & Yakovlev, N. Growth temperature and plasma power effects on N incorporation in InSbN grown by molecular beam epitaxy. Physica Status Solidi (RRL) – Rapid Research Letters 3, 263 (2009).
- Lim, K.P., Yoon, S. F., Pham H. T. Properties of InSbN grown on GaAs by radiofrequency nitrogen plasma-assisted molecular beam epitaxy. Journal of Physics D: Applied Physics 42, 135419 (2009)
- Pham, H. T., Yoon, S. F., Chen, K. P. & Boning, D. Characterization of carbon-doped InSb diode grown by molecular beam epitaxy. Journal of Physics D: Applied Physics 41, 025304 (2008).
- Lim, K. P., Yoon, S. F., Pham, H. T. & Tripathy, S. Defect characterization of InSb1-xNx grown using radio frequency nitrogen plasma-assisted molecular beam epitaxy. Journal of Physics D: Applied Physics 41, 165301 (2008).
- Pham, H. T., Yoon, S. F., Tan, K. H. & Boning, D. Effects of nitrogen incorporation in In Sb1-xNx grown using radio frequency plasma-assisted molecular beam epitaxy. Applied Physics Letters 90, 92115 (2007).
- Pham, H. T., Yoon, S. F., Boning, D. & Wicaksono, S. Molecular beam epitaxial growth of indium antimonide and its characterization. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, 11 (2007).
II.Conference Papers:
- Dang Ngoc Thao Thy, Pham Huynh Tram, Nhieu Nhat Luong: Agent-based simulation for price strategies. Proceedings of International Conference on Logistics and Industrial Engineering (2019)
- Tran Ha Thanh Vy, Pham Huynh Tram, Nguyen Truong Nguyen: Application of Mix-Integer Programming and Simulation for facility layout planning – A case study of Thu Duc Electro-Mechanical Joint Stock Company. Proceedings of International Conference on Logistics and Industrial Engineering (2019)
- Duong Viet Thanh Truc, Pham Huynh Tram, Nhieu Nhat Luong: Flexible flow shop manufacturing system improvement by simulation approach: A case study of handbags manufacturer in Ho Chi Minh City. Proceedings of International Conference on Logistics and Industrial Engineering (2019)
- Tran Thi Yen Nhu, Nhieu Nhat Luong, Pham Huynh Tram: Capacitated vehicle routing problem with time windows and split delivery integrated with an information management system for cargo delivery service in Ho Chi Minh City: a case study of Rong Thien logistics company. Proceedings of International Congress on Logistics and SCM Systems 2018. (2018).
- Cu Hoang Hung, Pham Huynh Tram, Ho Anh Tuan: Improving distributor productivity by one-week lean workshop approach. Proceedings of the 13th International Congress on Logistics and SCM Systems 2018. (2018)